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Dr. Hans Zogg10:30 a.m.
October 18, 2007
Cook Hall Room 3118A-B
Dr. Hans Zogg
Thin Film Physics Group,
ETH Zürich, Switzerland
"Epitaxial lead-chalcogenides on Si for mid-IR detectors and emitters including cavities" | Presentation Contents:
IV-VIs (lead chalcogenides)
growth and properties
new devices
- tunable RCED (resonant cavity enhanced detector) for the mid-IR
- VECSEL (vertical external cavity surface emitting laser) for the mid-IR
Hans Zogg received his diploma and PhD in physics in 1970 and 1974, respectively, both from
the Swiss Federal Institute of Technology at Zürich (ETHZ), Switzerland. After an industrial
research position in material science, he joined AFIF (Arbeitsgemeinschaft für Industrielle
Forschung) at ETHZ in 1978 where he founded a group active on applied thin film research.
>From May 1997 until Sept. 2000, the group was with the Institute of Quantum Electronics (Prof.
Dr. H. Melchior), and since then, the group is affiliated to the Laboratory for Solid State Physics
(Prof. Dr. H.R. Ott). He was the first to grow IV-VI and CdTe epitaxial layers on Si-substrates
with the use of IIa-fluoride buffer layers, and fabricated the first narrow gap infrared sensors on a
Si-substrate in 1984. His current main interests are thin film epitaxial growth, material aspects of
thin films, the physics and technology of infrared sensor arrays and lasers, thin film solar cells,
and dislocation glide kinetics in IV-VI epitaxial layers. He is private lecturer at ETHZ since
1989, and leads a 15 person group on heteroepitaxy, infrared device applications, and solar cell
research. He is author/coauthor of more than 220 publications, a few patents, and >25 PhD
students finished or are working on a thesis in his group up to now. |
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