Friday, May 16, 2014, 02:00pm
Principal Electrical Engineer, Argonne National Laboratory
"Wide Bandgap (WBG) Power Electronics - Opportunities and Challenges"
Abstract: For nearly five decades, silicon has remained as the industry workhorse for electrical power switching. In the past two decades, there has been a concerted effort to develop Silicon Carbide (SiC) and Gallium Nitride (GaN) power semiconductor devices because of their superior electrical and thermal performances compared to silicon power devices. However, the progress has been slow despite significant R&D investment. This talk will unravel critical issues that have hindered manufacturing and large-scale commercialization of reliable low-cost Wide Band Gap (WBG) power devices and compact power converters for a wide range of terrestrial and space applications including electric vehicles, smart grids, lighting, computing, communication, motor control, renewable energy utilization.
Bio: Dr. Krishna Shenai earned his PhD degree in electrical engineering from Stanford University, Stanford, CA in 1986. He is employed as Principal Electrical Engineer within the Electrical Systems Division at Argonne National Laboratory, Argonne, IL where he is leading the effort to develop and commercialize Wide Band Gap (WBG) semiconductor materials and devices for power electronics switching, power amplifier and sensor applications. For nearly 30 years, Dr. Shenai has pioneered and made seminal contributions to the development and manufacturing of power semiconductor materials and devices, and power converters and power amplifiers. He is a Fellow of IEEE, a Fellow of APS, a Fellow of AAAS, a Fellow of IETE-India, and a member of the Serbian Academy of Engineering. Dr. Shenai has authored or co-authored more than 350 peer-reviewed archival papers and 10 book chapters; edited six books; and, is a named inventor in 13 issued US patents. He was the Editor of IEEE Trans. Electron Devices (1990-2000), founding Editor-in-Chief (EIC) of IEEE Electron Devices Society Newsletter (1994-2002), and served as the invited guest editor for a Special Issue of IEEE Trans. Electron Devices and two Special Issues of IEEE J. Solid-State Circuits. Currently, he serves as a member of the IEEE EDS Technical Committees on “Semiconductor Manufacturing” and “Power Devices”; founding chair of IEEE PELS Technical Subcommittee on “Power Modules,”; an editor of IEEE J. Electron Devices Society; and, a guest editor of the IEEE Trans. Electron Devices on “Wide Bandgap Power Devices.” Dr. Shenai is also the founding lead organizer of the Electrochemical Society (ECS) Symposium on GaN and SiC Power Technologies; founding Chair of the IEEE Int. Workshop on Integrated Power Modules (IWIPP2015) and the IEEE Int. Conf. on DC Microgrids (DCMG2015). He is a member of the Board of Governors of Dielectrics Science & Technologies and Electronic and Photonics Divisions of the Electrochemical Society. Dr. Shenai a Distinguished Lecturer of IEEE Electron Devices Society.
Hosted by: EECS Prof. Manijeh Razeghi