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• M. Razeghi, Fundamentals of Solid State Engineering , 3rd ed., Springer, 2009.
• + handouts.
REFERENCE TEXT: R.F. Pierret, Semiconductor Device Fundamentals , Addison-Wesley, 1996.
COURSE COORDINATOR: Manijeh Razeghi
COURSE GOALS: The course is an introduction to semiconductor fundamentals and applications to the electronic devices. Course creates the background in the physics of the compound semiconductor-based electronic devices and also prepare students to advanced courses in solid state and quantum electronics. The course provides an opportunity for students to continue education in undertaking advanced study and research in the variety of different branches of semiconductor device applications. Topics include the background solid state and semiconductor physics, and basic principles of electronic devices operation.
PREREQUISITES : EECS 223, EECS 381, or consent of instructor.
DETAILED COURSE TOPICS:
WEEK 1: Review of the crystalline properties of solids (structure of crystals, unit cell, Wigner-Seitz cell, Bravais lattice, crystal systems, symmetry properties, point groups, space groups, Miller indices, packing factor, reciprocal lattice, Brillouin zone).
WEEK 2: Review of electrons and energy band structures in crystals (Bloch theorem, Kronig-Penney model, energy bands, nearly-free electron approximation, tight binding approximation, dynamics of electrons in a crystal, Fermi energy, Fermi distribution, density of states (3D), electrons and holes, first Brillouin zone, band structures in metals).
WEEK 3: Equilibrium electrical properties of semiconductors (1/2): density of states, effective density of states.
WEEK 4: Equilibrium electrical properties of semiconductors (2/2): mass action law, intrinsic and extrinsic semiconductors, charge neutrality, n-type doping, p-type doping, Fermi energy, Fermi integral, electron and hole concentration.
WEEK 5: Non-equilibrium electrical properties of semiconductors (1/2): drift, drift current, Ohm's law, resistivity, conductivity, carrier collision and scattering, Hall effect, Lorentz force, mobility.
WEEK 6: Non-equilibrium electrical properties of semiconductors (2/2): diffusion, diffusion current, diffusion length, Einstein relations, carrier generation and recombination mechanisms (Shockley-Read-Hall, Auger, surface recombinations), carrier lifetime, capture cross section, quasi-Fermi energy.
WEEK 7: Semiconductor p-n and metal-semiconductor junctions (1/2): ideal p-n junction, built-in potential, drift and diffusion currents, depletion width, forward bias, reverse bias, ideal diode equation, minority carrier lifetime, capacitance.
WEEK 8: Semiconductor p-n and metal-semiconductor junctions (2/2): forward bias deviations from the ideal p-n junction case, breakdown, avalanche breakdown, Zener breakdown, metal-semiconductor junctions, ohmic and Schottky contacts.
WEEK 9: Transistors (1/2): overview of amplification and switching, bipolar junction transistor (BJT) principles, amplification process, electrical charge distribution and transport, current gain.
WEEK 10: Transistors (2/2): deviations from ideal BJT case, heterojunction bipolar transistors, junction field effect transistors (JFET), metal-oxide-semiconductor field effect transistor (MOSFET), deviations from the ideal MOSFET case, application specific transistors.
COMPUTER USAGE: None.
HOMEWORK ASSIGNMENTS: Homework is assigned weekly to reinforce concepts learned in class.
LABORATORY PROJECTS: None.
Homework - 50%
Final - 50%
COURSE OBJECTIVES: When a student completes this course, s/he should be able to:
• Understand the basic physics of semiconductor electronic devices. The importance of electrons and holes in semiconductors, the charge density and distribution, the charge transport mechanisms.
• Understand the physics of a p-n junction and semiconductor-metal junctions.
• Understand the internal workings of the most basic solid state electronic devices.
ABET: 80 % Science, 20 % Engineering