Surface treatments of ZnO and their effects using LEEN spectroscopy, PL
and SEM
Interface defects in AlGaN/GaN heterostructure using LEEN Spectroscopy
Publication
Aaron Gin, Yajun Wei, Junjik Bae, Andrew Hood,
Jongbum Nah,
and Manijeh Razeghi, "Passivation of type II InAs/GaSb superlattice
photodiode," Thin Solid
Films, Vol. 447-448, 489 (2004).
Manijeh Razeghi, Yajun Wei, Junjik Bae, Aaron Gin,
Andrew
Hood, Jutao Jiang, and Jongbum Nah, "Type II InAs/GaSb superlattices
for high-performance photodiodes and FPAs," Proc. of SPIE, Vol. 5246,
501-511 (2003).
Manijeh Razeghi, Aaron Gin, Yajun Wei, Junjik Bae,
and
Jongbum Nah, "Quantum sensing using Type II InAs/GaSb superlattice for
infrared detection," Microelectronics
Journal, Vol. 34, 405-410 (2003).
Yajun Wei, Junjik Bae, Aaron Gin, Andrew Hood,
Manijeh
Razeghi, Gail J. Brown, and Meimei Tidow, "High quality type II
InAs/GaSb superlattices with cutoff wavelength ~3 micro-meter using
interface engineering," Journal
of Applied Physics, Vol. 94, 4720 (2003).
Y. M. Strzhemechny, John Nemergut, Philip E. Smith,
Junjik
Bae, David C. Look, and Leonard J. Brillson, "Remote Hydrogen Plasma
Processing of ZnO Single Crystal Surface," Journal of Applied Physics,
Vol. 94, 4256 (2003).
Y. M. Strzhemechny, John Nemergut, Junjik Bae, David
C. Look, and Leonard J. Brillson, "Effect of Remote Hydrogen Plasma
Treatment on ZnO Single Crystal Surface," Mat. Res. Soc. Symp. Proc.,
Vol. 744, M3.9.1 (2003).
L. J. Brillson, A. P. Young, G. H. Jessen, T. M.
Levin, S.
T. Bradley, S. H. Gross, Junjik Bae, F. A. Ponce, M. J. Murphy, W. J.
Schaff, and L. F. Eastman, "Low energy electron-excited
nano-luminescence spectroscopy of GaN suerface and interfaces," Applied Surface Science,
Vol. 175-176, 442-449 (2001).
A. P. Young, Junjik Bae, L. J. Brillson, M. J.
Murphy, and
W. J. Schaff, "Depth-resolved spectroscopy of interface defects in
AlGaN/GaN heterostructure field effect transistors device structures," J. Vac. Sci. Technol. B,
Vol. 18, 2309 (2000).